Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9572348 | Applied Surface Science | 2005 | 5 Pages |
Abstract
The field emission current density j from the ternary alloy AlxGa1âxN is theoretically calculated as a function of composition x for 0 â¤Â x â¤Â 1. By considering the doping and background concentrations and the internal field emission as sources of the carrier concentration n, we use a fully exact scheme to calculate j from AlxGa1âxN. It is found that the exact x-dependence of n yields theoretical j in agreement with experiment.
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Physical and Theoretical Chemistry
Authors
Tae S. Choi, Moon S. Chung,