Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9572400 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Dopant (boron or phosphorus) effect on metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films has been systematically studied by using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The MILC was realized by depositing a-Si film onto an oxidized Si wafer and then annealing in a N2 atmosphere. The doped amorphous films have been developed by plasma-enhanced chemical vapor deposition (PECVD). Various dopant gases and annealing times were investigated to study dopant effects on MILC films. It has been found that the un-doped poly-Si film has a MILC length larger than that of samples doped with boron or phosphorus. The phosphorus-doped films exhibit larger grain size as compared with un-doped and boron-doped films. Larger MILC length is obtained by increasing annealing time, but the MILC rate is decreased. In addition, nickel-silicides were found in the doped samples by XRD. Physical mechanisms for these experimental results are proposed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jun-Dar Hwang, Jyh-Yeu Chang, Ching-Yuan Wu,