Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9572477 | Applied Surface Science | 2005 | 6 Pages |
Abstract
The adsorption of K on the n-GaAs(1 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(1 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage θ > 1 ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state.
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Authors
M.H. Sun, T.X. Zhao, C.Y. Jia, P.S. Xu, E.D. Lu, C.C. Hsu, Hang Ji,