Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9577522 | Chemical Physics Letters | 2005 | 5 Pages |
Abstract
Single-crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4 gas at 450 °C. Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50-70 nm and a length of several micrometers. High-resolution transmission electron microscopy demonstrated that the nanowires have excellent single-crystal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires under our experimental conditions.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Chen Li, Chi Gu, Zengtao Liu, Jinxiao Mi, Yong Yang,