Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy

Gallium nitride nanorods with indium-related novel architecture have been grown on silicon (1 1 1) substrate by molecular beam epitaxy. Indium was supplied during the growth to synthesize the ternary InGaN. Scanning electron microscope images indicate that the nanorods have several short branches. Energy dispersive X-ray spectroscopy reveals that the indium was included at the specified-region of the nanorod and the branches are pure GaN. The branches grow on the InGaN segment. Cathodoluminescence spectrum of the nanorods shows two peaks at room temperature, which are around 3.10 and 3.40 eV, respectively.