| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9586178 | Journal of Luminescence | 2005 | 5 Pages |
Abstract
A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jai Singh,