| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9586183 | Journal of Luminescence | 2005 | 4 Pages |
Abstract
Photoluminescence spectra of ZnSe single crystals doped with Au during a long high-temperature treatment of as-grown crystals in Zn+Au or Se+Au melts are investigated in the temperature range from 83 to 300Â K. The Au-doping from Zn+Au melt leads to the formation of both simple defects (Aui donors and AuZn acceptors) and acceptor associates (AuZn-Aui). The edge luminescence is attributed to radiative annihilation of Aui and VSe donor-bound excitons. The edge spectra of the crystals doped with Au from Se+Au melt contain the band ascribed to radiative annihilation of AuZn acceptor-bound excitons.
Related Topics
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Physical and Theoretical Chemistry
Authors
N.D. Nedeoglo, A.N. Avdonin, G.N. Ivanova, D.D. Nedeoglo, G.V. Kolibaba, V.P. Sirkeli,