Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9586212 | Journal of Luminescence | 2005 | 5 Pages |
Abstract
We have investigated optical properties of high-quality ZnO thin films grown by a sputtering method. By introducing a low-temperature buffer layer of ZnO, the lattice-mismatched strain is relaxed and the crystallinity is improved remarkably. In the absorption spectrum at 10Â K, the absorption peaks of the A and B excitons are observed. In the photoluminescence (PL) spectrum, the free-exciton PL is observed and the defect-related PL is negligibly weak. These results clearly indicate high crystallinity of the film. Furthermore, under high-density excitation conditions, a PL band originating from an inelastic scattering process of excitons, the so-called P emission, is observed in the ZnO thin film.
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Authors
T. Shimomura, D. Kim, M. Nakayama,