Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9586282 | Journal of Luminescence | 2005 | 8 Pages |
Abstract
Si nanocrystals embedded in SiO2 doped with P and Au at concentrations in the range of 1Ã1018-3Ã1020Â cmâ3 exhibit photoluminescence quenching. Upon increasing the Au concentration, a gradual decrease in nanocrystal photoluminescence intensity is observed. Using a statistical model for luminescence quenching, we derive a typical radius of â¼3Â nm for nanocrystals luminescing around 800Â nm. Au doping also leads to a luminescence lifetime reduction, which is attributed to energy transfer between adjacent Si nanocrystals, possibly mediated by the presence of Au in the form of ions or nanocrystals. Doping with P at concentrations up to 3Ã1019Â cmâ3 leads to a luminescence enhancement, most likely due to passivation of the nanocrystal-SiO2 interfaces. Upon further P doping the nanocrystal luminescence gradually decreases, with little change in luminescence lifetime.
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Authors
Anna L. Tchebotareva, Michiel J.A. de Dood, Julie S. Biteen, Harry A. Atwater, Albert Polman,