Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9586309 | Journal of Luminescence | 2005 | 5 Pages |
Abstract
Amorphous Si/SiO multilayers have been prepared at 100 °C by successive evaporations of pure silicon and a silicon oxide powder. The silicon thickness is equal to 6 Ã
and the influence of the barrier thickness is investigated. Photoluminescence in the visible range was observed at room temperature for a barrier thickness greater or equal to 16Â Ã
. Two contributions at 550 and 750Â nm are distinguishable. The band at 550Â nm is attributed to the silicon oxide layer whereas the photoluminescence at 750Â nm is attributed to three dimensionally confined amorphous silicon clusters, which originates from the discontinuity of the amorphous silicon layers.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
H. Rinnert, M. Vergnat,