| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9586319 | Journal of Luminescence | 2005 | 6 Pages |
Abstract
The radiative recombination mechanisms of the Zn-doped GaS have been investigated using photoluminescence (PL) measurements. In these undoped and Zn-doped samples, the five emission bands at 2.570, 2.555, 2.534, 2.521, and 2.480Â eV are related to the indirect band exciton with phonon emission. The PL spectrum (at 77Â K) related to the impurity level is dominated by the new emission band at 1.85Â eV. The temperature dependences of the PL intensity, peak energy, and full-width at half-maximum are characterized by the recombination mechanism of the configurational coordinate model. It is found that the1.85Â eV emission band is related to the acceptor-vacancy complex center.
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Authors
S. Shigetomi, T. Ikari,