| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9594476 | Surface Science | 2005 | 8 Pages |
Abstract
Using scanning tunneling microscopy (STM), the early stages of the Cr/Si(1 1 1) interface formation was studied. Two growth regimes, solid phase epitaxy and reactive deposition epitaxy, were employed. Deposited Cr amount was varied from 0.1 to 2.0 monolayers, growth temperature was ranging from room temperature to 750 °C. The effect of the growth conditions on the structure and morphology of the formed interface was established.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
O.A. Utas, T.V. Utas, V.G. Kotlyar, A.V. Zotov, A.A. Saranin, V.G. Lifshits,