Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594513 | Surface Science | 2005 | 8 Pages |
Abstract
Clean 6H-SiC(0Â 0Â 0Â 1)-(3Â ÃÂ 3) surfaces were deposited with 0.25-3.5Â Ã
Co at room temperature and subsequently annealed to 950 °C. The structure, chemistry and morphology of Co deposited SiC surfaces were investigated using low energy electron diffraction, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and atomic force microscopy. A Co-induced (6 Ã 6) superstructure is observed by LEED after annealing 0.25 Ã
Co deposited SiC surface at 700 °C for 5 min. At higher coverage, CoSi(1 Ã 1) domains rotated 30° with respect to the underlying SiC substrate are formed after annealing 3.5 Ã
Co deposited SiC surface at 300 °C for 5 min. The LEED patterns as a function of Co coverage and annealing temperature are also reported.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Wei Chen, Hai Xu, Kian Ping Loh, Andrew Thye Shen Wee,