| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9594563 | Surface Science | 2005 | 8 Pages |
Abstract
Growth modes of Co thin films on the both N-saturated and partially N-adsorbed Cu(0Â 0Â 1) surfaces are studied in detail. From results of the STM and XPS measurements, segregation of N atoms depending on the Co island size is concluded. This new type of atom segregation is explained by means of a lattice strain of the substrate due to the small Co island formation. A novel core-level shift of NÂ 1s during the Co film growth is also reported. A possible influence of the lattice strain to the electronic structure of the surfactant is discussed.
Keywords
NanopatterningIon implantation methodsNitrogen atomSurface stressEpitaxySurface segregationGrowthMetal–metal magnetic thin film structuresThin film structuresX-ray photoelectron spectroscopyModels of surface kineticsCopperScanning tunneling microscopyLow energy electron diffraction (LEED)CobaltSurface tension
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Daiichiro Sekiba, Shunsuke Doi, Kan Nakatsuji, Fumio Komori,