Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594585 | Surface Science | 2005 | 9 Pages |
Abstract
We investigate possible step geometries on the rebonded-step reconstructed Ge(1Â 0Â 5) surface. We focus our attention on steps oriented along the [0Â 1Â 0] direction, which have been shown to play a key role in the pyramid-to-dome transition during Ge growth on Si(0Â 0Â 1). Using molecular dynamics simulations based on the Tersoff potential, we evaluate the step formation energy for several alternative structures. The step-bunching process is also analyzed, showing that one monolayer-high steps are likely to group into multistepped structures. Our results provide support for very recent experiments and modeling on the pyramid-to-dome transition in Ge/Si(0Â 0Â 1).
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
S. Cereda, F. Montalenti, Leo Miglio,