Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594592 | Surface Science | 2005 | 9 Pages |
Abstract
The electronic states of Ag deposited Ge(0Â 0Â 1) surfaces at 100Â K and their changes after the annealing at room temperature were investigated by using low-temperature angle-resolved photoelectron spectroscopy. Below 1 mono-layer of Ag, the surface did not show any metallic behaviors both at 130Â K and after the annealing at room temperature. At 130Â K, the Ag atoms adsorb as Ag ad-dimer at valley bridge site between the adjacent substrate dimer rows without breaking the Ge dimer structure. After the annealing at room temperature, the signal from the Ge dimer back-bond is significantly modified indicating changes in the dimer structure. All these findings are consistent with the previous observations by scanning tunneling microscopy: thermal diffusion and clustering of initially adsorbed Ag aggregates below 180Â K; transformation of internal structure of Ag islands by further annealing above 240Â K. The present study strongly supports the transformation as a restructuring process between Ag and Ge atoms at the interface.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Kan Nakatsuji, Yasumasa Takagi, Masamichi Yamada, Yoshitaka Naitoh, Fumio Komori,