Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594615 | Surface Science | 2005 | 9 Pages |
Abstract
The formation of the interface during the deposition of titanium on sputter-cleaned Si(1 0 0) substrates has been studied at room temperature using X-ray photoelectron spectroscopy (XPS), angle resolved XPS (ARXPS), ultraviolet photoelectron spectroscopy (UPS) and ion scattering spectroscopy (ISS). The experimental results are consistent with a two-stage mechanism for Ti growth: a first stage characterized by the formation of a uniform layer â¼4 monolayer (ML) thick of TiSix (x â 0.78), followed by a second stage in which metallic Ti grows over the titanium silicide formed previously. During the second stage, metallic Ti grows according to a Stranski-Krastanov mechanism, with the formation of a Ti monolayer followed by the growth of metallic titanium islands with an average thickness of 7 ML. The formation of a titanium silicide during the first stage of growth, involves charge transfer from Ti to Si.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Arranz, C. Palacio,