Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594720 | Surface Science | 2005 | 5 Pages |
Abstract
We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p++n or n++p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip-sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 Ã 1010 q cmâ2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Saraf, Y. Rosenwaks,