Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594747 | Surface Science | 2005 | 9 Pages |
Abstract
The present work deals with semiconductor nano-patterning technique based on scratching an insulating layer using the tip of either a micro-indenter or an atomic force microscope. The insulating or masking layer can be a thin oxide film (10Â nm thick) grown on a p-Si (1Â 0Â 0) or self-assembled organic monolayer covalently bound to a n-Si (1Â 1Â 1) surface. Electrochemical techniques are used for Cu deposition in the openings made by scratching through the masking layers. Engraving properties at both micro- and nanoscale are investigated. It is shown that under optimized deposition parameters selective and well-defined metallic structures onto Si surfaces can be produced with a lateral resolution in the several 100Â nm range.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L. Santinacci, Y. Zhang, P. Schmuki,