| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9594900 | Surface Science | 2005 | 9 Pages |
Abstract
Finally, we observed that the fractions of silicon and germanium atoms in the ionized fraction of the sputtered flux are equivalent to their elemental fractions in the alloy. This behavior suggests the possibility to establish a protocol for the quantification of germanium concentration that can be applied to any Si1âxGex alloy avoiding matrix effects.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Perego, S. Ferrari, M. Fanciulli,