Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594931 | Surface Science | 2005 | 7 Pages |
Abstract
Well-ordered Mo(1Â 1Â 2)-(8Â ÃÂ 2)-TiOx films were grown on the Mo(1Â 1Â 2) surface. Two preparation methods, direct growth on the Mo(1Â 1Â 2) surface and indirect growth by deposition of Ti onto monolayer SiO2/Mo(1Â 1Â 2), were used. The latter method was found to be more reproducible with respect to film quality as determined by low-energy electron diffraction and scanning tunneling microscopy. The well-ordered (8Â ÃÂ 2)-TiOx film, for which a structure is proposed, was determined to be 1Â ML and the Ti to be in an oxidation state of +3 using Auger spectroscopy, high-resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M.S. Chen, W.T. Wallace, D. Kumar, Z. Yan, K.K. Gath, Y. Cai, Y. Kuroda, D.W. Goodman,