Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9594945 | Surface Science | 2005 | 5 Pages |
Abstract
Ultrathin HfO2 films were deposited on a Si substrate at 25 °C and 350 °C by electron-beam (e-beam) evaporation using a metallic source in an O2 pressure of 2 Ã 10â7 Torr. In situ synchrotron radiation photoelectron spectroscopy (SRPES) was used to investigate the chemistry of HfO2 films on Si(1 0 0) at the initial growth stage. Si-rich silicates are found at the interfaces of HfO2/Si grown at both 25 °C and 350 °C, whereas a small portion of Hf-suboxides are also observed for the sample grown at 25 °C. The formation of interface layers at such a low O2 pressure, which are mainly composed of Si-rich silicates, is attributed to the Hf atom catalytic oxidation effect.
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Authors
R. Xu, Z.J. Yan, S. Chen, Y.L. Fan, X.M. Ding, Z.M. Jiang, Z.S. Li,