Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9595127 | Surface Science | 2005 | 6 Pages |
Abstract
With the help of scanning tunneling microscopy observations and first-principles calculations, we demonstrate that B preferential occupation at self-interstitial sites of Si(1Â 1Â 3) induces 3Â ÃÂ 1:B surfaces made up of adatoms and interstitial pentamers. The B atoms may serve as adatoms, while the interstitial pentamers may be boronized with different numbers of B atoms owing to the self-interstitial effects of B atoms. Our findings indicate that a Si(1Â 1Â 3) surface may be doped with B to an extremely high level.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Zhaohui Zhang, Koji Sumitomo,