Article ID Journal Published Year Pages File Type
9595127 Surface Science 2005 6 Pages PDF
Abstract
With the help of scanning tunneling microscopy observations and first-principles calculations, we demonstrate that B preferential occupation at self-interstitial sites of Si(1 1 3) induces 3 × 1:B surfaces made up of adatoms and interstitial pentamers. The B atoms may serve as adatoms, while the interstitial pentamers may be boronized with different numbers of B atoms owing to the self-interstitial effects of B atoms. Our findings indicate that a Si(1 1 3) surface may be doped with B to an extremely high level.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
, ,