| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9595612 | Surface Science | 2005 | 7 Pages |
Abstract
We report on the formation of a stable (4Â ÃÂ 1) reconstruction of the chalcopyrite CuGaSe2(0Â 0Â 1) surface. Using Ar+ ion-bombardment and annealing of epitaxial CuGaSe2 films grown on GaAs(0Â 0Â 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4Â ÃÂ 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0Â 0Â 1) surfaces of the Cu-III-VI2(0Â 0Â 1) material can show stable, unfacetted surfaces.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Th. Deniozou, N. Esser, S. Siebentritt,