Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618628 | Solar Energy Materials and Solar Cells | 2005 | 13 Pages |
Abstract
A novel gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet. We report on the results of applying the method for growth of amorphous, microcrystalline, homoepitaxial silicon films and transparent conducting oxides (ZnO:Al). Our method demonstrates the high deposition rates (up to 5Â nm/s) of microcrystalline Si films at low temperatures on large area substrates (area up to 15Ã15Â cm2).
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
R.G. Sharafutdinov, S.Ya. Khmel, V.G. Shchukin, M.V. Ponomarev, E.A. Baranov, A.V. Volkov, O.I. Semenova, L.I. Fedina, P.P. Dobrovolsky, B.A. Kolesov,