Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618662 | Solar Energy Materials and Solar Cells | 2005 | 11 Pages |
Abstract
The effect of the total SiH4/H2 gas pressure (1-10Â Torr) on the growth rate, the film crystallinity and the nature of hydrogen bonding of microcrystalline silicon thin films deposited by 13.56Â MHz plasma-enhanced chemical vapour deposition (PECVD) was investigated under well-controlled discharge conditions. The deposition rate presents an optimum for 2.5Â Torr, which does not follow the trend of silane consumption that increases with pressure and is attributed to an increase in plasma density. The film crystallinity increases with pressure from 1-2.5Â Torr and then remains almost the same, whereas the films deposited at 1Â Torr are highly stressed. On the other hand, hydrogen bonding is also drastically affected.
Related Topics
Physical Sciences and Engineering
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Authors
E. Katsia, E. Amanatides, D. Mataras, Î. Soto, G.A. Voyiatzis,