Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618675 | Solar Energy Materials and Solar Cells | 2005 | 6 Pages |
Abstract
This paper reports on the measurement of residual stress in EFG silicon ribbons for solar cell applications using the phase-shifting infrared (IR) photoelastic method. The samples analysed were wafers cut from EFG octagons with 100Â mm face width and from EFG 125Â mm face-width octagon under development. Experimental results show that the distribution of residual stress in both types of samples is similar, within measurement uncertainties. The average residual stress in the samples is about 8Â MPa. Maximum stresses of around 30Â MPa are associated with twin and grain boundaries. Significant variations of stress along the growth direction, possibly related to buckling, were also measured.
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Physical Sciences and Engineering
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Catalysis
Authors
M.C. Brito, J. Maia Alves, J.M. Serra, R.M. Gamboa, C. Pinto, A.M. Vallera,