Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618680 | Solar Energy Materials and Solar Cells | 2005 | 7 Pages |
Abstract
The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p-i-n solar cell (30Ã40Â cm2) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12Â MHz. In this work the solar cell was split into small areas of 0.126Â cm2, aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400-750Â nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83Â V, short circuit current density of 17.14Â mA/cm2 and an efficiency of 8% were obtained at growth rates higher than 0.3Â nm/s.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
L. Raniero, N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, R. Martins,