Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618688 | Solar Energy Materials and Solar Cells | 2005 | 12 Pages |
Abstract
The effects of discharge parameters on the properties of hydrogenated silicon-carbon films deposited by PECVD system have been investigated. Hydrogenated microcrystalline silicon-carbon films have been grown at low RF power. The increase in RF power from 5 to 25Â W leads to a decrease of the crystallinity degree and an enhancement of the carbon content from 0.025 to 0.10. The optical energy gap can be tuned in the 1.86-1.96Â eV range and the dark conductivity decreases by about three orders of magnitude. In the investigated pressure range (1.7-2.9Â Torr) microcrystalline samples show approximately the same optical and electrical properties. Microcrystalline films with high dark conductivity present an n-type character and the micro-mono crystalline silicon heterostuctures fabricated with these materials reveal a rectifying behaviour of the junctions.
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Authors
U. Coscia, G. Ambrosone, S. Lettieri, P. Maddalena, V. Rigato, S. Restello, E. Bobeico, M. Tucci,