Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618701 | Solar Energy Materials and Solar Cells | 2005 | 7 Pages |
Abstract
Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium-tin-oxide layer. The pentacene layer was evaporated in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature and moderate deposition rates (<10Â Ã
/s). Optical measurements evidence absorption peaks at energy positions 1.86, 1.97, 2.13, 2.3 and 2.5Â eV, corresponding to singlet states of the lowest unoccupied molecular orbital of pentacene. The current-voltage characteristics show good rectifying behaviours. Finally, a clear antibatic response is observed in the external quantum efficiency of the photodiodes when illuminated through the indium-tin-oxide contact.
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Authors
C. Voz, J. Puigdollers, I. MartÃn, D. Muñoz, A. Orpella, M. Vetter, R. Alcubilla,