Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9618711 | Solar Energy Materials and Solar Cells | 2005 | 8 Pages |
Abstract
We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (Joe). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain Joe values in the range of 300 fA cmâ2 for sheet resistances around 100 Ω⧸sq. Finally, we obtain effective surface recombination velocity values around 104 cm sâ1 by fitting the measured Joe values with PC1D simulated ones.
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Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
A. Orpella, M. Vetter, R. Ferré, I. MartÃn, J. Puigdollers, C. Voz, R. Alcubilla,