Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9633041 | International Journal of Mineral Processing | 2005 | 9 Pages |
Abstract
UV spectroscopic results show that dixanthogen began to form on the chalcopyrite surface at a potential of + 0.04 V vs. NHE at pH 10 and â 0.01 V vs. NHE at pH 7. The amount of dixanthogen formed on the chalcopyrite surface initially increased with the increase of the applied potential and then decreased with the increasing potential. The optimum potential range for dixanthogen formation on the chalcopyrite surface was from + 0.14 V to + 0.34 V vs. NHE at pH 10 and from + 0.14 V to + 0.44 V vs. NHE at pH 7. It was difficult to completely remove the dixanthogen film on the chalcopyrite surface.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Hai Guo, Wan-Tai Yen,