Analysis of growth rate during Si epitaxy by hydrogen coverage model

Growth rate of Si epitaxy on (1 0 0) and (1 1 0) Si surfaces was analyzed by a hydrogen coverage model assuming that the source disilane molecules adsorb and decompose only at the dangling bond site on the surface. The rate of each elementary process such as adsorption and decomposition of source molecules on the surface and desorption of hydrogen was evaluated from growth rate dependence on the temperature and the source gas pressure. It was revealed that the low sticking coefficient of the source molecule and low desorption rate of hydrogen on the (1 1 0) surface is responsible to the lower growth rate on the (1 1 0) surface than that on (1 0 0) surface.