Article ID Journal Published Year Pages File Type
9699129 Materials Science in Semiconductor Processing 2005 4 Pages PDF
Abstract
The discussion deals with experimental data on the process of formation of self-organized Ge islands on the oxidized atomically pure Si(1 0 0) surface. Unlike the Stranski-Krastanow mechanism, which is characteristic of Ge growth on the pure silicon surface, the Volmer-Weber growth mechanism is observed on the oxidized silicon surface. The growth process is accompanied by a considerable change (up to 7%) in the surface unit cell of Ge relative to the parameters of Si. The elastically strained nanoislands are less than 10 nm in base size and more than 2×1012 cm−2 at the Ge film not thicker than 5 monolayers. Bimodal size and density distribution of islands is observed on the oxidized Si(1 0 0) surface at germanium film thickness of more than 5 monolayers.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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