Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9699129 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
The discussion deals with experimental data on the process of formation of self-organized Ge islands on the oxidized atomically pure Si(1Â 0Â 0) surface. Unlike the Stranski-Krastanow mechanism, which is characteristic of Ge growth on the pure silicon surface, the Volmer-Weber growth mechanism is observed on the oxidized silicon surface. The growth process is accompanied by a considerable change (up to 7%) in the surface unit cell of Ge relative to the parameters of Si. The elastically strained nanoislands are less than 10Â nm in base size and more than 2Ã1012Â cmâ2 at the Ge film not thicker than 5 monolayers. Bimodal size and density distribution of islands is observed on the oxidized Si(1Â 0Â 0) surface at germanium film thickness of more than 5 monolayers.
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Authors
A.I. Nikiforov, V.V. Ulyanov, O.P. Pchelyakov, S.A. Teys, A.K. Gutakovsky,