Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9699132 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
Control of N2 and SiH4 reaction on Si(1Â 0Â 0) enhanced by Ar plasma irradiation is investigated with the aim of realization of an N delta-doped Si epitaxial film out of thermal equilibrium. Si epitaxial growth on about 7.6Ã1014Â cmâ2 nitrided Si(1Â 0Â 0) and formation of an N delta-doped Si epitaxial film are achieved by N2 and SiH4 reaction under Ar plasma exposure without substrate heating. Lowering of the Si deposition rate is observed on the nitrided Si(1Â 0Â 0) surface, and surface roughness tends to increase with the initial N amount. The incorporated N atoms are confined in a 3.5-nm-thick region and the total N amount reaches as high as 5.5Ã1014Â cmâ2. Ar incorporation is also observed and the peak position of the Ar concentration is different from that of N.
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Authors
Masaki Mori, Takuya Seino, Daisuke Muto, Masao Sakuraba, Junichi Murota,