Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9699135 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
Au-induced low-temperature (400 °C) crystallization of amorphous-Si1âxGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1âxGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao,