| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9699136 | Materials Science in Semiconductor Processing | 2005 | 6 Pages |
Abstract
Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (â¼10 μm for 5 h and â¼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.
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Authors
Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao,