Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9699137 | Materials Science in Semiconductor Processing | 2005 | 7 Pages |
Abstract
We investigated re-crystallization, the redistribution of arsenic and germanium, and the electrical properties of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic ions. Our aim was to acquire basic information regarding the fabrication of strained-silicon MOSFETs with low-resistance source and drain regions. The strained-silicon layers were completely re-crystallized with rapid thermal annealing at 900 °C or higher. Arsenic diffusivity was identical in strained and unstrained silicon but was higher than both of these in SiGe. Germanium recoil produced by implanting arsenic in the SiGe layer was observed. The solubility limit for arsenic was 2Ã1020 cmâ3 in both strained and unstrained silicon but was lower, 1Ã1020 cmâ3, in Si0.7Ge0.3. Electron mobility was greater in strained silicon than in unstrained silicon by about 20-30% and lower in Si0.7Ge0.3 than in silicon by about 20-30%. A thicker layer of strained silicon is thus desirable for reducing parasitic resistance in the source and drain region.
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Authors
Nobuyuki Sugii, Yoshinobu Kimura, Shin'ichiro Kimura, Shigefumi Irieda, Jun Morioka, Taroh Inada,