Article ID Journal Published Year Pages File Type
9699141 Materials Science in Semiconductor Processing 2005 6 Pages PDF
Abstract
Boron diffusion in SiGeC layers is studied under different actual process conditions, with RTA temperatures in the range 1020-1100 °C. Model parameters for the process simulator TSUPREM-4 (Tsuprem-4 computer code from Avant! Corporation) have been derived for equilibrium and transient enhanced diffusion conditions. The model and model parameters have been validated for a 0.13 μm BiCMOS process.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
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