Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9699164 | Materials Science in Semiconductor Processing | 2005 | 4 Pages |
Abstract
A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 μΩ cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for ft and fMAX, respectively.
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Engineering
Electrical and Electronic Engineering
Authors
Erik Haralson, Erdal Suvar, B. Gunnar Malm, Henry Radamson, Yong-Bin Wang, Mikael Ãstling,