Article ID Journal Published Year Pages File Type
9699164 Materials Science in Semiconductor Processing 2005 4 Pages PDF
Abstract
A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 μΩ cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for ft and fMAX, respectively.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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