Article ID Journal Published Year Pages File Type
9699165 Materials Science in Semiconductor Processing 2005 5 Pages PDF
Abstract
Nickel-silicided/Si1−xGex Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si0.75Ge0.25 layer at a temperature range of 300-900 °C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains, formed during annealing. Schottky barrier height (ΦB) of the silicided diodes was extracted from forward current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The forward I-V characteristics were also simulated for understanding the influence of interfacial layer present at the silicide and Si0.75Ge0.25 interface. The capacitance-voltage method was used to determine the energy distribution of the interface state density (Dit) and was found to decrease with increasing energy from the valence band edge.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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