| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9699167 | Materials Science in Semiconductor Processing | 2005 | 6 Pages |
Abstract
The Ge-fractions found were in good agreement with XRD and SIMS whilst the calculated “doping parameter” was found to follow a monotonic relationship with changes in Boron concentration in each case.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Stephen Morris, Paul Fougeres, Stéphanie Bozzo-Escoubas, Sylvie Bodnar, Stephane Gaillard,