| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9699168 | Materials Science in Semiconductor Processing | 2005 | 5 Pages |
Abstract
The application of Raman spectroscopy and spectroscopic ellipsometry (SE) for characterization of strained silicon layers on SiGe virtual substrates is demonstrated. X-ray diffraction measurements (XRD) for calibration of Raman results have been carried out on strained Si/SiGe structures. For the composition-dependent shift of the Si-Si vibration in SiGe the relation ÏSi-Si=520.6-68xGe is found, the strain shift coefficient for the longitudinal optical phonon in Si is estimated as â750Â cmâ1. Three different samples with strained-Si layers on step-graded SiGe profiles with nominal final Ge concentrations in the range from 10% to 24% were investigated by XRD, transmission electron microscopy, Raman spectroscopy and SE to determinate the parameters Si cap thickness, strain in the Si layer, Ge content and relaxation of the SiGe film. A good correspondance of the results from all techniques is found.
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Authors
Jens Schmidt, Günther Vogg, Frank Bensch, Stephan Kreuzer, Peter Ramm, Stefan Zollner, Ran Liu, Peter Wennekers,