| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9699173 | Materials Science in Semiconductor Processing | 2005 | 5 Pages |
Abstract
An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while minimizing the parasitic collector-base capacitance (Ccb). TCAD simulations were used to provide insight into a 300Â GHz HBT's current flow lines and to derive design guidelines for the optimal mask width of the SIC implant. This boosted the HBT's transit frequency (ft) by 6.5% and the unity power gain (fmax) by 23%.
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Electrical and Electronic Engineering
Authors
Andreas D. Stricker, Gregory Freeman, Marwan Khater, Jae-Sung Rieh,