pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si1−xGexis presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.