Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes

Vertically integrated npnp Si-based RITD pairs are realized by stacking two RITDs with a connecting backwards diode between them. The I-V characteristics of the vertically integrated RITDs pairs demonstrate two sequential negative differential resistance (NDR) regions under forward biasing. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.