SOS and CMOS differential micromagnetodiodes with electrically controlled sensitivity

Essentially new experimental results of two parallel-field differential micromagnetodiodes based on SOS and CMOS technologies with electrically controlled sensitivity are presented. A dramatic increase of the magnetosensitivity by introduction of discontinuous gates in SOS devices, operating in accumulation condition and by forming of additional n+-p junctions in CMOS ones working with extraction mode are achieved. It is shown that the transducer efficiency increases 4.2 and 11.9 times, respectively, in comparison to sensors without gates and collectors. At low frequencies f ≤ 1 kHz, the internal noise of two devices is of 1/f type. Parasitic effects at f ≤ 35 kHz frequencies of alternating magnetic field are not expected.