| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9699749 | Sensors and Actuators A: Physical | 2005 | 10 Pages |
Abstract
In this paper, we present a new type of rf MEMS switch with low actuation voltage and high isolation, for high rf power and reliability applications in telecommunication. 'Symmetric toggle switch' (STS) is based on push-pull mechanism and utilizes torsion springs and levers, placed symmetrically and transverse to CPW line. The switches designed for 8-14Â GHz applications have analytically calculated and FEM simulated actuation voltages in the range of 8-10Â V. The simulated insertion loss and isolation for the devices are 0.25 and 35Â dB, respectively, at 10Â GHz. The fabrication process and preliminary experimental results are also presented.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Kamaljit Rangra, Benno Margesin, Leandro Lorenzelli, Flavio Giacomozzi, Cristian Collini, Mario Zen, Giovanni Soncini, Laura del Tin, Roberto Gaddi,
