| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9758777 | Organic Electronics | 2005 | 8 Pages |
Abstract
An analysis of recombination in bilayer organic light-emitting diodes is presented using numerical simulations and analytical model. It is shown using simulations that although recombination occurs close to the organic-organic interface, the recombination peak can lie either in the hole transport layer (HTL) or the electron transport layer (ETL) of the device. An analytical model is presented which provides insight into charge accumulation and transport across the organic interface and explains the shift in recombination peak with changes in interfacial barrier heights. The impact of interfacial barrier heights on electric field at the organic interface is also discussed.
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Physical Sciences and Engineering
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Chemistry (General)
Authors
B. Mazhari,