Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9774250 | Surface Science Reports | 2005 | 53 Pages |
Abstract
This article discusses the past 40 years of research covering the equilibrium thermodynamic properties of the arsenic-rich GaAs(0â0â1) surface, which is the starting surface for producing the majority of optoelectronic devices worldwide. A coherent picture of the observed surface structures, theoretical calculations, and experimental results will be presented. The interplay in surface-free-energy-reduction between reconstruction transformation and roughening is now well understood for the GaAs(0â0â1) surface and will be discussed. The recent confirmations of the structural models for the (2Ã4) and c(4Ã4) reconstructions as well as the discovery of preroughening aid in this understanding.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Vincent P. LaBella, Michael R. Krause, Zhao Ding, Paul M. Thibado,